| PART |
Description |
Maker |
| ISPPAC-CLK5610V-01T100I ISPPAC-CLK5610V-01T48C ISP |
In-System Programmable, Zero-Delay Clock Generator with Universal Fan-Out Buffer
|
LATTICE[Lattice Semiconductor]
|
| 1503 1503J 1503-100A 1503-100B 1503-100C 1503-120B |
Max delay 35 ns, Mechanically variable delay line
Max delay 250 ns, Mechanically variable delay line
Max delay 150 ns, Mechanically variable delay line
Max delay 130 ns, Mechanically variable delay line
Max delay 80 ns, Mechanically variable delay line
Max delay 60 ns, Mechanically variable delay line
Max delay 50 ns, Mechanically variable delay line
Max delay 40 ns, Mechanically variable delay line
Max delay 30 ns, Mechanically variable delay line
Max delay 25 ns, Mechanically variable delay line
Max delay 20 ns, Mechanically variable delay line
Max delay 200 ns, Mechanically variable delay line
Max delay 160 ns, Mechanically variable delay line
Max delay 15 ns, Mechanically variable delay line
Max delay 140 ns, Mechanically variable delay line
Max delay 120 ns, Mechanically variable delay line
Max delay 100 ns, Mechanically variable delay line
Mechanically variable passive delay line
|
Data Delay Devices Inc
|
| W83176G-735 |
(W83176x-735) DIMM DDR ZERO DELAY BUFFER
|
Winbond
|
| ICS93776 |
Low Cost DDR Phase Lock Loop Zero Delay Buffer
|
Integrated Circuit Systems
|
| 3D7010SERIES 3D7010S-80 3D7010S-90 3D7010S-400 |
300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit 整体0 - TAP在固定延迟线
MONOLITHIC 10-TAP FIXED DELAY LINE
Delay 8 /-1.5 ns, monolithic 10-TAP fixed delay line
Delay 9 /-1.7 ns, monolithic 10-TAP fixed delay line
Delay 40 /-4 ns, monolithic 10-TAP fixed delay line
|
Interpower, Corp.
Data Delay Devices Inc
|
| KM48L16031BT-GFZ/Y/0 KM416L8031BT-GFZ/Y/0 KM44L160 |
DDR SDRAM Specification Version 0.61 DDR SDRAM的规格版.61
16M X 8 DDR DRAM, 0.8 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| PLL103-53XM PLL103-53 PLL103-53XC PLL103-53XI |
DDR SDRAM Buffer with 5 DDR or 3 SDR/3 DDR DIMMS
|
PLL[PhaseLink Corporation]
|
| 3D7304 3D7304-25 3D7304-100 3D7304-15 3D7304-20 3D |
MONOLITHIC QUADRUPLE FIXED DELAY LINE
Delay 25 /-1 ns, monolithic quadruple fixed delay line
Delay 100 /-2 ns, monolithic quadruple fixed delay line
Delay 10 /-1 ns, monolithic quadruple fixed delay line
Delay 15 /-1 ns, monolithic quadruple fixed delay line
Delay 20 /-1 ns, monolithic quadruple fixed delay line
Delay 200 /-4 ns, monolithic quadruple fixed delay line
Delay 30 /-1 ns, monolithic quadruple fixed delay line
Delay 300 /-6 ns, monolithic quadruple fixed delay line
Delay 40 /-1 ns, monolithic quadruple fixed delay line
Delay 400 /-8 ns, monolithic quadruple fixed delay line
Delay 50 /-1 ns, monolithic quadruple fixed delay line
Delay 500 /-10 ns, monolithic quadruple fixed delay line
|
Data Delay Devices Inc
|
| CY7C1168V18-400BZXC CY7C1168V18-375BZXC CY7C1168V1 |
1M X 18 DDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 1M X 18 DDR SRAM, 0.45 ns, PBGA165
2M X 8 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| MT46V32M8P-75ZATF MT46V16M16CV-5BK MT46V64M4 MT46V |
32M X 8 DDR DRAM, 0.75 ns, PDSO66 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66
16M X 16 DDR DRAM, 0.7 ns, PBGA60
Double Data Rate (DDR) SDRAM
|
Micron Technology
|
| HY5DU56422DTP HY5DU56822DTP HY5DU56822DTP-J HY5DU5 |
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
